FQP12P20
Manufacturer:
On Semiconductor
Mfr.Part #:
FQP12P20
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole P-Channel number of channels:1 120 W 200 V Continuous Drain Current (ID):11.5 A 40 nC
| Parameter | Value |
|---|---|
| Gate Charge | 40 nC |
| Gate to Source Threshold Voltage | 5 V |
| Continuous Drain Current (ID) | 11.5 A |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 470 mΩ |
| Input capacitance | 1.2 nF |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Power Dissipation | 120 W |
| Drain to Source Breakdown Voltage (Vds) | 200 V |
| Number of Channels | 1 |
| Packaging | Tube |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | P-Channel |
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